Nanoneedles - surprising
structures enable lasers and photonics on CMOS-Si
Roger Chen, Wai Son Ko, Kun Li, Fanglu Lu, Kar Wei Ng, Fan
Ren, Thai-Truong D. Tran
is the basis for electronic devices, and III-V semiconductors
make the best photonic components, but the crystal lattice mismatch
these material types has made integrating the two a longstanding
problem. Our group has discovered a new GaAs-based nanostructure that
this roadblock: sharp, hexagonal pyramids of high-quality crystal that
catalyst-free at CMOS-compatible temperatures directly on silicon,
and other substrates. The nanoneedles scale with growth time and can be
layered, doped, as well as selectively etched to create
structures for diverse applications, including optical interconnects,
microscopy, field emission, nonlinear optical signal generation,
displays, and nanofluidics. In our group, we are developing novel
nano-optoelectronic devices based on nanoneedles. Our research includes
by metal-organic chemical vapor deposition (MOCVD), material and
characterization, as well as device fabrication and testing.
and optical studies have shown
nanoneedles to have a unique, single crystal dislocation-free wurtzite
which can be used for lasing and second harmonic generation. The high
quality of III-V nanoneedles grown on silicon is unmatched, making
an exciting approach towards developing practical silicon-based
for the future.
microfabrication techniques, we have thus far
demonstrated two nanoneedle-based devices directly grown on silicon
GaAs avalanche photodiodes (APDs) and InGaAs/GaAs light emitting diodes
Testing at room temperature reveals that nanoneedle-based APDs are more
sensitive, pack more densely, and demand less power than existing
temperature electroluminescence from nanoneedle
LEDs meanwhile demonstrates a critical first step towards an
Chen, Thai-Trung D. Tran, Kar Wei
Wai Son Ko, Linus C. Chuang, Forrest G. Sedgwick, Connie
Chang-Hasnain, “Nanolasers grown on silicon,” Nature Photonics
5, 170-175 (2011).
- Linus C. Chuang, Forrest G. Sedgwick,
Roger Chen, Wai Son Ko, Michael Moewe, Kar Wei Ng, Thai-Truong D. Tran,
Chang-Hasnain, “GaAs-Based Nanoneedle Light Emitting Diode and
Avalanche Photodiode Monolithically Integrated on a Silicon Substrate,”
11, 385-390 (2011).
C. Chuang, Roger Chen, Forrest Sedgwick, Wai Son Ko, Kar Wei Ng,
Thai-Truong D. Tran, Connie Chang-Hasnain, “InGaAs QW Nanopillar Light
Emitting Diodes Monolithically Grown on a Si Substrate,” Conference on
Lasers and Electro-Optics, May 2010.
Crankshaw, Linus C.
Chuang, Michael Moewe, Connie Chang-Hasnain, “Polarized zone-center
phonon modes of wurtzite GaAs,” Phys. Rev. B
81, 233303 (2010).
Chen, Shanna Crankshaw,
Thai-Truong D. Tran, Linus C. Chuang, Michael Moewe, Connie
Chang-Hasnain, “Second-harmonic generation from a single wurtzite GaAs
nanoneedle,” Appl. Phys. Lett. 96,
Moewe, Linus C. Chuang,
Shanna Crankshaw, Kar Wei Ng, Connie Chang-Hasnain, “Core-shell
InGaAs/GaAs quantum well nanoneedles grown on silicon with
silicon-transparent emission,” Opt. Express 17,
C. Chuang, Forrest Sedgwick, Wai Son Ko, Michael Moewe, Connie
Chang-Hasnain, “GaAs-Nanoneedle Avalanche Photodetectors Monolithically
Grown on a Si Substrate,” International Symposium on Compound
Semiconductors, September 2009.
Linus C. Chuang,
Shanna Crankshaw, Chris Chase, Connie Chang-Hasnain,
“Atomically sharp catalyst-free wurtzite GaAs/AlGaAs nanoneedles grown
silicon,” Appl. Phys. Lett. 93,